Main principle of this thesis is to analysis Development of Improved I-V Characteristics Models for Nanometer Size MESFETs. In this dissertation, numerous models of MESFETs are analyzed and by enhancing the Ahmed et al. model, two different models are developed for the modeling involving I-V characteristics of nanometer selection GaAs MESFETs and SiC MESFETs. For this specific purpose two algorithms have been developed for just two different models.
